MOSFET

         ¥³ MOSFET Arrays 

Enhancement Mode MOSFET Arrays

• N-Channel

Device Number	Channels/ Types1	BVDSS min(V)	RDS(ON) max(§Ù)	Plastic DIP (N6, J)	Ceramic DIP (N7, NC, P)	SO-8 (TG)	SOW-202 (WG)
TN0604	4N	40	1.0				*
VN0104	4N	40	3.0	*
VN3205	4N	50	0.3	*
TN0606	4N	60	1.5	*	*
VN0106	4N	60	3.0	*	*
VQ1004	4N	60	3.5	*
VQ1000	4N	60	5.5	*	*
VN2222	4N	220	1.25		*
TD9944	2N	240	6.0			*

Add package suffix for complete part number, e.g., TD9944TG is TD9944 in a SO-8 package. 

• P-Channel

Device Number	Channels/ Types1	BVDSS min(V)	RDS(ON) max(§Ù)	Plastic DIP (N6, J)	Ceramic DIP (N7, P)	SOW-202 (WG)
TP0604	4P	-40	2.0			*
VP0104	4P	-40	8.0		*
VP0106	4P	-40	8.0		*

Add package suffix for complete part number, e.g., TP0604WG is TP0604 in a SOW-20    

Complementary N-and P-Channel

Device Number	Channels/ Types1	BVDSS min(V)	RDS(ON) max(§Ù) N-Channel	RDS(ON) max(§Ù) P-Channel	Plastic DIP (N6, J)	Ceramic DIP (N7, P)	SOW-202 (WG)
VQ7254	2N + 2P	20	1.0	2.0	*
TC0604	2N + 2P	40	1.0	2.0			*
TQ30013	2N + 2P	40	1.0	2.0		*
VQ3001	2N + 2P	40	1.0	2.0	*
VC0106	2N + 2P	60	3.0	8.0	*

 

Add package suffix for complete part number, e.g., TC0604WG is TC0604 in       aSOW-20 package.

 

High Voltage Low Leakage Monolithic Arrays

Device Number	No. of Channels/ Types	Logic Configuration	BVDSS min	RDS(ON) max	16 Pin SOIC	Die ND
AN0332	8N	8 bit addressable latch w/reset function, very low output leakage current<1nA average per channel4	320V	350§Ù	*	*
AP0332	8P	8 bit addressable latch w/set function, very low output leakage current<1nA average per channel4	-320V	700§Ù	*	*

Add package suffix for complete part number, e.g., AN0332CG is AN0332 in a 16-Pin SOIC package.

Notes:

1. Four independent and isolated die.
   
2. Same as SO-20 with 300 mils wide body.
   
3. Low gate threshold version of VQ3001.
   
4. Average current per channel measured with all eight channels connected in parallel.